?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fkn08pn60 rev. a fkn08pn60 triac (silicon bidirectional thyristor) tm august 2006 fkn08pn60 triac (silicon bidirectional thyristor) application explanation ? switching mode power supply, light dimmer, electric flasher unit, hair drier ? tv sets, stereo, refrigerator, washing machine ? electric blanket, solenoid dr iver, small motor control ? photo copier, electric tool absolute maximum ratings t a = 25c unless otherwise noted thermal characteristics note1: infinite cooling condition. note2: jesd51-10 ( test borad: fr4 3.0?*4.5?*0.062?, minimum land pad) symbol parameter value rating units v drm v rrm peak repetitive off-state voltage sine wave 50 to 60hz, gate open 600 v i t (rms) rms on-state current commercial frequency, sine full wave 360 conduction, tc= 70 0.8 a i tsm surge on-state current sinewave 1 full cycle, peak value, non-repetitive 50hz 8 a 60hz 9 a i 2 t i 2 t for fusing value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms 0.33 a 2 s p gm peak gate power dissipation 5 w p g (av) average gate power dissipation 0.1 w v gm peak gate voltage 5 v i gm peak gate current 1 a t j junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 125 c symbol parameter value units r jc thermal resistance, junction to case (note1) 40 c/w r ja thermal resistance, junction to ambient (note2) 160 c/w 1 3 2 1: t 1 2: gate 3: t 2 1 2 3 to-92
2 www.fairchildsemi.com fkn08pn60 rev. a fkn08pn60 triac (silicon bidirectional thyristor) electrical characteristics t c = 25c unless otherwise noted commutation dv/dt test symbol parameter test condition min. typ. max. units i drm i rrm repetieive peak off-state current v drm /v rrm applied - - 100 a v tm on-state voltage t c =25 c, i tm =1.12a instantaneous measurement - - 1.8 v v gt gate trigger voltage i v d =12v, r l =100 ? t2(+), gate (+) - - 2.0 v ii t2(+), gate (-) - - 2.0 v iii t2(-), gate (-) - - 2.0 v i gt gate trigger current i v d =12v, r l =100 ? t2(+), gate (+) - - 5 ma ii t2(+), gate (-) - - 5 ma iii t2(-), gate (-) - - 5 ma v gd gate non-trigger voltage t j =125 c, v d =1/2v drm 0.2 - - v i h holding current (i, ii,iii) v d = 12v, i tm = 200ma - - 15 ma i l latching current i, iii v d = 12v, i g = 10ma - - 15 ma ii - - 20 ma dv/dt(s) critical rate of rise of off-state voltag v drm = 63% rated, t j = 125 c, exponential rise 20 - - v/ s dv/dt(c) critical-rate of rise of off-state com - mutating voltage (di/dt=-0.7a/us) 3.0 - - v/ s v drm (v) test condition commutating voltage and current waveforms (inductive load) fkn08pn60 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c 3. peak off-state voltage v d = 300v supply voltage main current main voltage time time time v d (dv/dt) c (di/dt) c
3 www.fairchildsemi.com fkn08pn60 rev. a fkn08pn60 triac (silicon bidirectional thyristor) quadrant definitions for a triac package marking and ordering information device marking device package packing tape width quantity K08PN60 fkn08pn60 to-92 bulk -- -- t2 positive + - t2 negative quadrant ii quadrant i quadrant iii quadrant iv i gt -+ i gt (+) t2 (+) i gt gate t1 (+) t2 (-) i gt gate t1 (-) t2 (+) i gt gate t1 (-) t2 (-) i gt gate t1
4 www.fairchildsemi.com fkn08pn60 rev. a fkn08pn60 triac (silicon bidirectional thyristor) typical performance characteristics figure 1. on-state characteristics figure 2. power dissipation figure 3. rms current rating figure 4. typical gate trigger current vs junction temperature figure5. typical gate voltage vs junction temperarure figure6. typical latching currrent vs junction temperature 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 t j =125 o c t j =25 o c v tm [v], on-state voltage i tm [a], on-state current 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 dc 180 o c 120 o c 90 o c 60 o c 30 o c p av [w], maximum average power dissipation it rms [a], on-state current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 70 80 90 100 110 120 dc 180 o c 120 o c 90 o c 60 o c 30 o c maximum allowable case temperature, t c [ o c] it rms [a], on-state current -40 0 40 80 120 0 1 2 3 4 5 6 q3 q1 i gt [ma], gate trigger current t j [ o c], junction temperature q2 -40 0 40 80 120 0.4 0.5 0.6 0.7 0.8 0.9 1.0 q3 q1 v gt [ma], gate trigger voltage t j [ o c], junction temperature q2 -40 0 40 80 120 0 2 4 6 q3 q1 v gt [ma], gate trigger voltage t j [ o c], junction temperature
5 www.fairchildsemi.com fkn08pn60 rev. a fkn08pn60 triac (silicon bidirectional thyristor) typical performance characteristics (continued) figure7. typical holding current vs junction temperature figure8. junction to case thermal resistance -40 0 40 80 120 0 1 2 3 4 5 q3 q2 q1 i h [ma],holding current t j [ o c], junction temperature 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0 10 20 30 40 50 junction to case thermal resistance, [ o c/w] time, [s]
6 www.fairchildsemi.com fkn08pn60 rev. a fkn08pn60 triac (silicon bidirectional thyristor) package dimension 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92
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